document number: 83690 for technical questi ons, contact: optocouplers.answers@vishay.com www.vishay.com rev. 1.5, 07-may-08 193 optocoupler, phototriac output, zero crossing brt21/brt22/brt23 vishay semiconductors description the brt21, brt22, brt23 prod uct family consists of ac switch optocouplers with zero voltage detectors with two electrically insulated lateral power ics which integrate a thyrister system, a photo detect or and noise suppression at the output and an ir gaas diode input. high input sensitivity is achieved by using an emitter follower phototransistor and a scr predriver resulting in an led trigger current of less than 2 ma or 3 ma (dc). inverse parallel scrs provide commutating dv/dt greater than 10 kv/s. the zero cross line voltage detection circuit consists of two mosfets and a photodiode. the brt21/22/23 product family isolates low-voltage logic from 120, 230, and 380 vac lines to control resistive, inductive or capacitive loads including motors, solenoids, high current thyristers or triac and relays. features ? high input sensitivity i ft = 1.0 ma ?i trms = 300 ma ? high static dv/dt 10 000 v/s ? electrically insulated between input and output circuit ? microcomputer compatible ? trigger current - (i ft < 1.2 ma) brt22 f , brt23 f , - (i ft < 2 ma) brt21 h , brt22 h , brt23 h - (i ft < 3 ma) brt21 m , brt22 m , brt23 m ? available surface mount and on on tape and reel ? zero voltage crossing detector ? ul file e52744 system code j ? din en 60747-5-5 available with option 1 ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications ? industrial controls ? office equipment ? consumer appliances note for additional information on the availabl e options refer to option information. 17223 1 2 3 6 5 4 mt2 mt1 a c n c *zero crossing circ u it zcc* n c order information part remarks brt21h v drm 400 v, dip-6, i ft = 2.0 ma brt21m v drm 400 v, dip-6, i ft = 3.0 ma brt22f v drm 600 v, dip-6, i ft = 1.2 ma brt22h v drm 600 v, dip-6, i ft = 2.0 ma brt22m v drm 600 v, dip-6, i ft = 3.0 ma brt23f v drm 800 v, dip-6, i ft = 1.2 ma brt23h v drm 800 v, dip-6, i ft = 2.0 ma brt23m v drm 800 v, dip-6, i ft = 3.0 ma brt21h-x006 v drm 400 v, dip-6 400 mil (option 6), i ft = 2.0 ma brt21h-x007 v drm 400 v, smd-6 (option 7), i ft = 2.0 ma brt21m-x006 v drm 400 v, dip-6 400 mil (option 6), i ft = 3.0 ma brt22f-x006 v drm 600 v, smd-6 (option 7), i ft = 1.2 ma brt22h-x007 v drm 600 v, smd-6 (option 7), i ft = 2.0 ma brt22m-x006 v drm 600 v, dip-6 400 mil (option 6), i ft = 3.0 ma brt23f-x006 v drm 800 v, dip-6 400 mil (option 6), i ft = 1.2 ma brt23f-x007 v drm 800 v, dip-6 400 mil (option 6), i ft = 1.2 ma BRT23H-X006 v drm 800 v, dip-6 400 mil (option 6), i ft = 2.0 ma brt23h-x007 v drm 800 v, smd-6 (option 7), i ft = 2.0 ma brt23m-x006 v drm 800 v, dip-6 400 mil (option 6), i ft = 3.0 ma brt23m-x007 v drm 800 v, smd-6 (option 7), i ft = 3.0 ma
www.vishay.com for technical questions, contact: optocouplers. answers@vishay.com document number: 83690 194 rev. 1.5, 07-may-08 brt21/brt22/brt23 vishay semiconductors optocoupler, phototriac output, zero crossing notes (1) t amb = 25 c, unless otherwise specified. stresses in excess of the absolute maximum ratings can cause per manent damage to the device. functional operation of the device is not implied at these or any other c onditions in excess of t hose given in the operational sections of this document. exposure to abs olute maximum ratings for extended periods of the time can adversely affect reliability. (2) refer to reflow profile for soldering condi tions for surface mounted devices (smd). refe r to wave profile for soldering conditi ons for through hole devices (dip). absolute maximum ratings (1) parameter test condition part symbol value unit input reverse voltage i r = 10 a v r 6.0 v forward current i f 60 ma surge current i fsm 2.5 a power dissipation p diss 100 mw derate from 25 c 1.33 mw/c output peak off-state voltage i d(rms) = 70 a brt21 v dm 400 v brt22 v dm 600 v brt23 v dm 800 v rms on-state current i tm 300 ma single cycle surge current 3.0 a power dissipation p diss 600 mw derate from 25 c 6.6 mw/c coupler isolation test voltage (between emitter and detector, climate per din 500414, part 2, nov. 74) t = 1.0 min v iso 5300 v rms pollution degree (din vde 0109) 2 creepage distance 7.0 mm clearance distance 7.0 mm comparative tracking index per din iec 112/vde 0303 part 1, group iiia per din vde 6110 cti 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 v io = 500 v, t amb = 100 c r io 10 11 storage temperature range t stg - 40 to + 100 c ambient temperature range t amb - 40 to + 100 c soldering temperature (2) max. 10 s dip soldering 0.5 mm from case bottom t sld 260 c electrical characteristics parameter test condition symbol min. typ. max. unit input forward voltage i f = 10 ma v f 1.16 1.35 v reverse current v r = 6 v i r 0.1 10 a capacitance f = 1 mhz, v f = 0 v c o 25 pf thermal resistance, junction to ambient r thja 750 k/w
document number: 83690 for technical questi ons, contact: optocouplers.answers@vishay.com www.vishay.com rev. 1.5, 07-may-08 195 brt21/brt22/brt23 optocoupler, phototriac output, zero crossing vishay semiconductors note t amb = 25 c, unless otherwise specified. minimum and maximum values are test ing requirements. typical values are characteri stics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. output off-state voltage i d(rms) = 70 a v d(rms) 424 460 v repetitive peak off-state voltage i drm = 100 a v drm 600 v off-state current v d = v drm , t amb = 100 c, i f = 0 ma i d(rms) 10 100 a on-state voltage i t = 300 ma v tm 1.7 3.0 v on-state current pf = 1.0, v t(rms) = 1.7 v i tm 300 ma surge (non-repetitive), on-state current f = 50 hz i tsm 3.0 a trigger current temp. gradient i ft1 / t j 7.0 14 a/k i ft2 / t j 7.0 14 a/k inhibit voltage temp. gradient v dinh / t j - 20 mv/k off-state current in inhibit state i f = i ft1 , v drm i dinh 50 200 a holding current i h 65 500 a latching current v t = 2.2 v i l 5.0 ma zero cross inhibit voltage i f = rated i ft v ih 15 25 v turn-on time v rm = v dm = v d(rms) t on 35 s turn-off time pf = 1.0, i t = 300 ma t off 50 s critical rate of rise of off-state voltage v d = 0.67 v drm , t j = 25 c dv/dt cr 10000 v/s v d = 0.67 v drm , t j = 80 c dv/dt cr 5000 v/s critical rate of rise of voltage at current commutation v d = 0.67 v drm , di/dt crq 15 a/ms, t j = 25 c dv/dt crq 10000 v/s v d = 0.67 v drm , di/dt crq 15 a/ms, t j = 80 c dv/dt crq 5000 v/s critical rate of rise of on-state di/dt cr 8.0 a/s thermal resistance, junction to ambient r thja 125 k/w coupler critical rate of rise of coupled input/output voltage i t = 0 a, v rm = v dm = v d(rms) dv io /dt 10000 v/s common mode coupling capacitance c cm 0.01 pf capacitance (input to output) f = 1.0 mhz, v io = 0 v c io 0.8 pf isolation resistance v io = 500 v, t amb = 25 c r is 10 12 v io = 500 v, t amb = 100 c r is 10 11 trigger current v d = 5.0 v, f - versions i ft 1.2 ma v d = 5.0 v, h - versions i ft 2.0 ma v d = 5.0 v, m - versions i ft 3.0 ma electrical characteristics parameter test condition symbol min. typ. max. unit
www.vishay.com for technical questions, contact: optocouplers. answers@vishay.com document number: 83690 196 rev. 1.5, 07-may-08 brt21/brt22/brt23 vishay semiconductors optocoupler, phototriac output, zero crossing note as per iec 60747-5-2, 7.4.3.8.1, this optoc oupler is suitable for "safe electrical in sulation" only within the safety ratings . compliance with the safety ratings shall be ensured by means of protective circuits. power factor considerations a snubber is not needed to eliminate false operation of the triac driver because of the high static and commutating dv/dt with loads between 1.0 and 0.8 power factors. when inductive loads with power factors less than 0.8 are being driven, include a rc snubber or a single capacitor directly across the device to damp the peak commutating dv/dt spike. normally a commutating dv/dt causes a turning-off device to stay on due to the stored energy remaining in the turning-off device. but in the case of a zero voltage crossing optotriac, the commutating dv/dt spikes can inhibit one half of the triac from turning on. if the spike potential exceeds the inhibit voltage of the zero cross detect ion circuit, half of the triac will be heldoff and not turn-on. this hold-off condition can be eliminated by using a snubber or capacitor placed directly across the optotriac as shown in figure 1. note that the value of the capacitor increases as a function of the load current. the hold-off condition also can be eliminated by providing a higher level of led drive current. the higher led drive provides a larger photocurrent which causes the phototransistor to turn-on bef ore the commutating spike has activated the zero cross net work. figure 2 shows the relationship of the led drive for power factors of less than 1.0. the curve shows that if a device requires 1.5 ma for a resistive load, then 1.8 times 2.7 ma) that amount would be required to control an inductive load whose power factor is less than 0.3. fig. 1 - shunt capacitance vs. load current safety and insulation ratings parameter test condition symbol min. typ. max. unit climatic classification (according to iec 68 part 1) 40/100/21 comparative tracking index cti 175 399 v iotm 6000 v v iorm 630 v p so 200 mw i si 400 ma t si 175 c creepage distance standard dip-6 7 mm clearance distance standard dip-6 7 mm creepage distance 400 mil dip-6 8 mm clearance distance 400 mil dip-6 8 mm iil410_01 400 350 300 250 200 150 100 50 0 0.001 0.01 0.1 1 i l - load c u rrent (ma) (rms) c s - sh u nt capacitance ( f) c s ( f) = 0.0032 ( f)*10^0.0066 i l (ma) t a = 25 c, pf = 0.3 i f = 2.0 ma
document number: 83690 for technical questi ons, contact: optocouplers.answers@vishay.com www.vishay.com rev. 1.5, 07-may-08 197 brt21/brt22/brt23 optocoupler, phototriac output, zero crossing vishay semiconductors typical characteristics t amb = 25 c, unless otherwise specified fig. 2 - normalized led trigger current vs. power factor fig. 3 - forward voltage vs. forward current fig. 4 - peak led current vs. duty factor, tau fig. 5 - maximum led power dissipation fig. 6 - typical output characteristics fig. 7 - current reduction iil410_02 1.2 1.0 0. 8 0.6 0.4 0.2 0.0 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0 pf - po w er factor n i fth - n ormalized led trigger c u rrent i fth n ormalized to i fth at pf = 1.0 t a = 25 c iil410_03 100 10 1 0.1 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 i f - for w ard c u rrent (ma) v f - for w ard v oltage ( v ) t a = - 55 c t a = 25 c t a = 8 5 c iil410_04 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 100 1000 10000 t - led p u lse d u ration (s) if(pk) - peak led c u rrent (ma) 0.005 0.05 0.02 0.01 0.1 0.2 0.5 d u ty factor t df = /t iil410_05 100 8 0 60 40 20 0 - 20 - 40 - 60 0 50 100 150 t a - am b ient temperat u re (c) led - led po w er (m w ) 10 3 10 2 10 1 5 5 5 10 0 012 4 3 iil410_06 i t = f( v t ), parameter: t j t j = 25 c 100 c i t (ma) v t ( v ) 400 300 200 100 0 0204060 8 0 100 iil410_07 i trms (ma) t a (c) i trms = f( v t ), r thja = 150 k/ w de v ice s w itch soldered in pc b or b ase plate.
www.vishay.com for technical questions, contact: optocouplers. answers@vishay.com document number: 83690 198 rev. 1.5, 07-may-08 brt21/brt22/brt23 vishay semiconductors optocoupler, phototriac output, zero crossing fig. 8 - current reduction fig. 9 - typical trigger delay time fig. 10 - typical inhibit current fig. 11 - power dissipation 40 to 60 hz line operation fig. 12 - typical static inhibit voltage limit fig. 13 - 1- apply a capacitor to the supply pins at the load-side 400 300 200 100 0 50 60 70 8 0 90 100 iil410_0 8 i trms (ma) t pi n 5 (c) i trms = f(t pi n 5 ), r thj-pi n 5 = 16.5 k/ w thermoco u ple meas u rement m u st b e performed potentially separated to a1 and a2. meas u ring j u nction as near as possi b le at the case. iil410_09 t gd = f (i f i ft 25 c), v d = 200 v f = 40 to 60 hz, parameter: t j 10 3 10 2 10 1 5 f gd ( s) 10 0 5 10 1 5 10 2 i f /i ft25 c t j = 25 c 100 c iil410_10 i di n h = f (i f /i ft 25 c), v d = 600 v , parameter: t j 10 3 10 2 10 0 5 i di n h ( s) 0 2 4 6 8 10 12 14 16 1 8 20 i f /i ft25 c 10 1 5 t j = 25 c 100 c 0.6 0.4 0.5 0.3 0.2 0.1 0 0 100 200 300 iil410_11 p tot ( w ) i trms (ma) 40 to 60 hz line operation, p tot = f(i trms ) 12 10 8 6 4 10 0 5510 2 10 1 iil410_12 v v di n h min. ( v ) i f /i ft25 c v di n h min = f (i f /i ft 25c), parameter: t j de v ice zero v oltage s w itch can b e triggered only in hatched are b elo w t j c u r v es. t j = 25 c 100 c iil410_13 0.1 f 220 v ~ 1 2 3 6 5 4
document number: 83690 for technical questi ons, contact: optocouplers.answers@vishay.com www.vishay.com rev. 1.5, 07-may-08 199 brt21/brt22/brt23 optocoupler, phototriac output, zero crossing vishay semiconductors fig. 14 - 2 - connect a series resistor to the output and bridge both by a capacitor fig. 15 - 3 - connect a choke of low winding cap. in series, e.g., a ringcore choke, with higher load currents technical information see application note for additional information. package dimensions in inches (millimeters) iil410_14 22 nf 220 v ~ 2 1 3 5 6 4 33 iil410_15 22 nf 220 v ~ 1 2 3 5 4 6 500 h 0.020 (0.51) 0.040 (1.02) 0.300 (7.62) ref. 0.37 5 (9.53 ) 0.395 (10.03) 0.012 (0.30) typ. 0.0040 (0.102) 0.009 8 (0.249) 15 max. 0.24 8 ( 6.30 ) 0.256 (6.50 ) 0.33 5( 8 .50 ) 0.343 ( 8 .70 ) pin one id 6 5 4 1 2 3 iso method a 0.130 (3.30) 0.150 (3. 8 1) 0.033 (0. 8 4) typ. 0.033 (0. 8 4) typ. 0.100 (2.54) typ. 0.03 9 (1.00) min. 0.01 8 (0.46) 0.020 (0.51 ) 0.04 8 (1.22) 0.052 (1.32) 4 typ . 17222 0.407 (10.36) 0.391 (9.96) optio n6 min. 0.300 (7.62) typ. min. max. 0.02 8 (0.7) o ption 7 1 8 450-1 0.307 (7. 8 ) 0.291 (7.4) 0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92) 0.1 8 0 (4.6) 0.160 (4.1) 0.315 ( 8 .0) 0.331 ( 8 .4) 0.406 (10.3)
www.vishay.com for technical questions, contact: optocouplers. answers@vishay.com document number: 83690 200 rev. 1.5, 07-may-08 brt21/brt22/brt23 vishay semiconductors optocoupler, phototriac output, zero crossing ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national an d international stat utory requirements. 2. regularly and continuously improve the performance of ou r products, processes, distri bution and operating systems with respect to their impact on the health and safety of our employ ees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosp here which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london am endments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international in itiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of c ontinuous improvements to eliminat e the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air ac t amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applicat ions. all operating parameters must be validat ed for each customer application by the customer. should the buyer use vishay semi conductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damag es, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associat ed with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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